Development of a strained silicon-germanium channel PMOSFET integrable in an existing silicon-germanium HBT technology. by Prasanna Khare

download center

Development of a strained silicon-germanium channel PMOSFET integrable in an existing silicon-germanium HBT technology.

Prasanna Khare - Development of a strained silicon-germanium channel PMOSFET integrable in an existing silicon-germanium HBT technology.
Enter the sum